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International Symposium on Silicon Molecular Beam EpitaxyBARIBEAU, J.-M.Thin solid films. 1998, Vol 321, Num 1-2, issn 0040-6090, 277 p.Conference Proceedings

Molecular Beam Epitaxy 2000. Proceedings of the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China, 11-15 September 2000KONG, Mei Ying; TU, Charles W.Journal of crystal growth. 2001, Vol 227-28, issn 0022-0248, 1224 p.Conference Proceedings

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Twenty years of molecular beam epitaxyCHO, A. Y.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1-6, issn 0022-0248, 1Conference Paper

Iodine-assisted molecular beam epitaxyMICOVIC, M; LUBYSHEV, D; CAI, W. Z et al.Journal of crystal growth. 1997, Vol 175-76, pp 428-434, issn 0022-0248, 1Conference Paper

Dopant evaporation sources for molecular beam epitaxyWALKER, J. F; MICOVIC, M; CARNERA, A et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 990-994, issn 0022-0248Conference Paper

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Molecular beam epitaxy of nitride thin filmsPAISLEY, M. J; DAVIS, R. F.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 136-142, issn 0022-0248Conference Paper

Photoluminescence spectra of shadow masked multiple quantum wellsSOPITPAN, S; CHEEWATAS, P; THAINOI, S et al.Journal of crystal growth. 1997, Vol 175-76, pp 1152-1156, issn 0022-0248, 2Conference Paper

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Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlNKOUKITU, A; SEKI, H.Japanese journal of applied physics. 1997, Vol 36, Num 6B, pp L750-L753, issn 0021-4922, 2Article

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Self-Regulated Radius of Spontaneously Formed GaN Nanowires in Molecular Beam EpitaxyFERNÁNDEZ-GARRIDO, Sergio; KAGANER, Vladimir M; SABELFELD, Karl K et al.Nano letters (Print). 2013, Vol 13, Num 7, pp 3274-3280, issn 1530-6984, 7 p.Article

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Effects of strain on the growth and properties of CuInSe₂epitaxial filmsNIKI, S; FONS, P. J; SHIBATA, H et al.Journal of crystal growth. 1997, Vol 175-76, pp 1051-1056, issn 0022-0248, 2Conference Paper

Room Temperature Nanoimprint Lithography Using Molds Fabricated by Molecular Beam EpitaxyHARRER, Stefan; STROBEL, Sebastian; SCARPA, Giuseppe et al.IEEE transactions on nanotechnology. 2008, Vol 7, Num 3, pp 363-370, issn 1536-125X, 8 p.Article

Intersubband absorption from In_0.26Ga_0.74As/GaAs quantum dot superlatticePAN, D; ZENG, Y. P; LI, J. M et al.Journal of crystal growth. 1997, Vol 175-76, pp 760-764, issn 0022-0248, 2Conference Paper

Transient surface states during the CBE growth of GaAsFARRELL, T; HILL, D; JOYCE, T. B et al.Journal of crystal growth. 1997, Vol 175-76, pp 1217-1222, issn 0022-0248, 2Conference Paper

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